BSS138W
SIPMOS® Small-Signal-Transistor
Product Summary
Features
• N-channel
• Enhancement mode
V DS
60
V
R DS(on),max
3.5
Ω
ID
0.28
A
• Logic level
• dv /dt rated
• Pb-free lead-plating; RoHS compliant
PG-SOT-323
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
Type
Package
Tape and Reel
Marking
BSS138W
PG-SOT-323
SWs
BSS138W
PG-SOT-323
H6327: 3000
/
H6433: 10000
SWs
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T A=25 °C
0.28
T A=70 °C
0.22
1.12
Pulsed drain current
I D,pulse
T A=25 °C
Reverse diode dv /dt
dv /dt
I D=0.28 A, V DS=48 V,
di /dt =200 A/µs,
T j,max=150 °C
Gate source voltage
V GS
6
±20
ESD class
(JESD22-A114-HBM)
Unit
A
kV/µs
V
0 (2|I D|R DS(on)max,
I D=0.22 A
0.12
0.23
-
Transconductance
Rev. 2.43
g fs
page 2
S
2011-07-12
BSS138W
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
32
43
-
7.2
10
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
2.8
4.2
Turn-on delay time
t d(on)
-
2.2
3.3
Rise time
tr
-
3.0
4.5
Turn-off delay time
t d(off)
-
6.7
10
Fall time
tf
-
8.2
12
Gate to source charge
Q gs
-
0.10
0.13
Gate to drain charge
Q gd
-
0.3
0.4
Gate charge total
Qg
-
1.0
1.5
Gate plateau voltage
V plateau
-
3.2
-
V
-
-
0.28
A
-
-
1.12
-
0.85
1.2
V
-
8.3
12.4
ns
-
3.3
5
nC
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=30 V, V GS=10 V,
I D=0.2 A, R G=6 Ω
pF
ns
Gate Charge Characteristics
V DD=48 V, I D=0.2 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Rev. 2.43
T A=25 °C
V GS=0 V, I F=0.28 A,
T j=25 °C
V R=30 V, I F=0.28 A,
di F/dt =100 A/µs
page 3
2011-07-12
BSS138W
1 Power dissipation
2 Drain current
P tot=f(T A)
I D=f(T A); V GS≥10 V
0.3
0.5
0.25
0.4
0.3
I D [A]
P tot [W]
0.2
0.2
0.15
0.1
0.1
0.05
0
0
0
40
80
120
160
0
40
80
T A [°C]
120
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T A=25 °C; D =0
Z thJA=f(t p)
parameter: t p
parameter: D =t p/T
103
101
limited by on-state
resistance
10
160
T A [°C]
0.5
102
10 µs
0
0.2
100 µs
0.1
0.05
Z thJA [K/W]
I D [A]
1 ms
10 ms
10-1
100 ms
101
0.02
0.01
100
single pulse
DC
10-2
10-1
10-2
10-3
1
10
100
10-5
10-4
10-3
10-2
10-1
100
101
102
t p [s]
V DS [V]
Rev. 2.43
10-6
page 4
2011-07-12
BSS138W
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
0.6
10
V 10
V7
V5
2.9 V
V 4.5
0.5
3.2 V
3.5 V
4V
8
V4
R DS(on) [Ω]
I D [A]
0.4
V 3.5
0.3
V 3.2
6
4.5 V
4
5V
0.2
V 2.9
7V
10 V
2
0.1
0
0
0
1
2
3
4
5
0
0.1
V DS [V]
0.2
0.3
0.4
0.5
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
0.6
0.4
0.35
0.5
0.3
0.4
g fs [S]
I D [A]
0.25
0.3
0.2
0.15
0.2
0.1
0.1
0.05
0
0
0
1
2
3
4
5
Rev. 2.43
0.00
0.10
0.20
0.30
0.40
I D [A]
V GS [V]
page 5
2011-07-12
BSS138W
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=0.2 A; V GS=10 V
V GS(th)=f(T j); V DS=VGS; I D=26 µA
parameter: I D
8
2
1.6
6
V GS(th) [V]
R DS(on) [Ω]
%98
%98
4
1.2
typ
0.8
typ
2
%2
0.4
0
0
-60
-20
20
60
100
140
-60
-20
20
60
100
140
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
I F=f(V SD)
parameter: T j
100
102
150 °C, 98%
25 °C
25 °C, 98%
150 °C
Ciss
I F [A]
C [pF]
10-1
101
Coss
10-2
Crss
100
10-3
0
10
20
30
Rev. 2.43
0
0.4
0.8
1.2
1.6
2
V SD [V]
V DS [V]
page 6
2011-07-12
BSS138W
13 Typ. gate charge
14 Drain-source breakdown voltage
V GS=f(Q gate); I D=0.2 A pulsed
V BR(DSS)=f(T j); I D=250 µA
parameter: V DD
70
12
30 V
10
65
V BR(DSS) [V]
V GS [V]
8
48 V
12 V
6
60
4
55
2
50
0
0
0.2
0.4
0.6
0.8
1
Q gate [nC]
Rev. 2.43
-60
-20
20
60
100
140
180
T j [°C]
page 7
2011-07-12
BSS138W
Package Outline:
Footprint:
Rev. 2.43
Packaging:
page 8
2011-07-12
BSS138W
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.43
page 9
2011-07-12
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